Abstract
Outlines the issues associated with multigate FET manufacturing. This chapter describes thin-fin formation techniques, advanced gate stack deposition and source/drain resistance reduction techniques. Issues related to fin crystal orientation and mobility enhancement via strain engineering are tackled as well. © 2008 Springer Science+Business Media, LLC.
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CITATION STYLE
APA
Xiong, W. (2008). Multigate MOSFET technology. In FinFETs and Other Multi-Gate Transistors (pp. 49–111). Springer US. https://doi.org/10.1007/978-0-387-71752-4_2
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