There is an increasing demand for high precision coatings on large areas via in-line reactive sputtering, which requires advanced process control techniques. Thus, an improved theoretical understanding of the reactive sputtering process kinetics is mandatory for further technical improvement. We present a detailed Direct Simulation Monte Carlo (DSMC) gas flow model of an in-line sputtering coater for large area architectural glazing. With this model, the pressure fluctuations caused by a moving substrate are calculated in comparison with the experiment. The model reveals a significant phase shift in the pressure fluctuations between the areas above the center and the edges of the substrate. This is a geometric effect and is e. g. independent of the substrate travelling direction. Consequently, a long sputtering source will observe pressure fluctuations at its center and edges, which are out of phase. For a heuristic model of the reactive sputtering process, we show that in certain cases a two-dimensional model treatment is sufficient for predicting the film thickness distribution on the moving substrate. In other cases, a strong phase shift between averaged pressure fluctuations and reactive sputtering process response is observed indicating that a three-dimensional model treatment is required for a realistic simulation of the in-line deposition process. © Springer-Verlag Berlin Heidelberg 2006.
CITATION STYLE
Pflug, A., Siemers, M., & Szyszka, B. (2006). Parallel DSMC gasflow simulation of an in-line coater for reactive sputtering. In Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics) (Vol. 4192 LNCS, pp. 383–390). Springer Verlag. https://doi.org/10.1007/11846802_53
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