Strained silicon single nanowire gate-all-around TFETs with optimized tunneling junctions

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Abstract

In this work, we demonstrate a strained Si single nanowire tunnel field effect transistor (TFET) with gate-all-around (GAA) structure yielding Ion-current of 15 μA/μm at the supply voltage of Vdd = 0.5V with linear onset at low drain voltages. The subthreshold swing (SS) at room temperature shows an average of 76 mV/dec over 4 orders of drain current Id from 5 × 10-6 to 5 × 10-2 μA/μm Optimized devices also show excellent current saturation, an important feature for analog performance.

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Narimani, K., Trellenkamp, S., Tiedemann, A., Mantl, S., & Zhao, Q. T. (2018). Strained silicon single nanowire gate-all-around TFETs with optimized tunneling junctions. Applied Sciences (Switzerland), 8(5). https://doi.org/10.3390/app8050670

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