Abstract
The starting point of the mathematical model discussed in this chapter is the system of drift diffusion equations (see (6.2.1a)–(6.2.1f) below). This system of equations, derived more than fifty years ago [vRo50], is the most widely used to describe semiconductor devices. For the current state of technology, this system represents an accurate compromise between efficient numerical solvability of the mathematical model and realistic description of the underlying physics [Mar86, MRS90, Sel84].
Cite
CITATION STYLE
Leitão, A., Markowich, P. A., & Zubelli, J. P. (2007). Inverse problems for semiconductors: models and methods. In Modeling and Simulation in Science, Engineering and Technology (pp. 117–149). Springer Basel. https://doi.org/10.1007/978-0-8176-4554-0_6
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