C-V calculations in CdS/CdTe thin films solar cells with a CdSxTe1-x interlayer

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Abstract

In CdS/CdTe solar cells, chemical interdiffusion at the interface gives rise to the formation of an interlayer of the ternary compound CdSxCdTe1-x. In this work, we evaluate the effects of this interlayer in CdS/CdTe photovoltaic cells in order to improve theoretical results describing experimental C-V (capacitance versus voltage) characteristics. We extended our previous theoretical methodology developed on the basis of three cardinal equations (Castillo-Alvarado et al., 2010). The present results provide a better fit to experimental data obtained from CdS/CdTe solar cells grown in our laboratory by the chemical bath deposition (for CdS film) and the close-spaced vapor transport (for CdTe film) techniques. © 2013 A. Gonzalez-Cisneros et al.

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Gonzalez-Cisneros, A., Castillo-Alvarado, F. L., Ortiz-Lopez, J., & Contreras-Puente, G. (2013). C-V calculations in CdS/CdTe thin films solar cells with a CdSxTe1-x interlayer. International Journal of Photoenergy, 2013. https://doi.org/10.1155/2013/513217

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