CITATION STYLE
Mujtaba, S. A., Pinto, M. R., Boulin, D. M., Rafferty, C. S., & Dutton, R. W. (1995). An Accurate NMOS Mobility Model for 0.25µm MOSFETs. In Simulation of Semiconductor Devices and Processes (pp. 424–427). Springer Vienna. https://doi.org/10.1007/978-3-7091-6619-2_102
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