Terahertz emission from (100) InAs surfaces at high excitation fluences

Abstract

The radiated terahertz field from (100) InAs surfaces under excitation at fluences of millijoules per centimeter squared has been studied in detail in order to identify the main generation mechanism. We find that the terahertz emission depends strongly on pump polarization, and that the predominant emission mechanism appears to be the surface nonlinear optical response of the InAs crystal. A saturation fluence of 29±4 μJ cm2 is found for the emission. © 2005 American Institute of Physics.