Enhancement of InN luminescence by introduction of graphene interlayer

7Citations
Citations of this article
13Readers
Mendeley users who have this article in their library.

Abstract

Indium nitride (InN) luminescence is substantially enhanced by the introduction of a multilayer graphene interlayer, mitigating the lattice mismatch between the InN epilayer and the Gallium nitride (GaN) template on a sapphire substrate via weak van der Waals interaction between graphene and nitride layers. The InN epilayers are deposited by radio-frequency plasma-assisted molecular beam epitaxy (MBE), and are characterized by spatially-resolved photoluminescence spectroscopy using confocal microscopy. A small blue shift of the emission band from the band gap evidences a low density of equilibrium carriers, and a high quality of InN on multilayer graphene. A deposition temperature of ~375 ◦ C is determined as optimal. The granularity, which is observed for the InN epilayers deposited on multilayer graphene, is shown to be eliminated, and the emission intensity is further enhanced by the introduction of an aluminum nitride (AlN) buffer layer between graphene and InN.

References Powered by Scopus

Van der Waals heterostructures

9031Citations
N/AReaders
Get full text

Luminescence properties of defects in GaN

1805Citations
N/AReaders
Get full text

First-principles study of metal adatom adsorption on graphene

1390Citations
N/AReaders
Get full text

Cited by Powered by Scopus

Remote epitaxy of GaN via graphene on GaN/sapphire templates

29Citations
N/AReaders
Get full text

Understanding the electronic properties, contact types and optical performances in graphene/InN heterostructure: Role of electric gating

15Citations
N/AReaders
Get full text

Growth Mechanism of InN Nucleation Layers on Epitaxial Graphene Using Metal Organic Vapor Phase Epitaxy and Radio-Frequency Molecular Beam Epitaxy

14Citations
N/AReaders
Get full text

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Cite

CITATION STYLE

APA

Dobrovolskas, D., Arakawa, S., Mouri, S., Araki, T., Nanishi, Y., Mickevičius, J., & Tamulaitis, G. (2019). Enhancement of InN luminescence by introduction of graphene interlayer. Nanomaterials, 9(3). https://doi.org/10.3390/nano9030417

Readers over time

‘19‘20‘21‘22‘2302468

Readers' Seniority

Tooltip

PhD / Post grad / Masters / Doc 4

57%

Researcher 3

43%

Readers' Discipline

Tooltip

Physics and Astronomy 4

67%

Engineering 2

33%

Article Metrics

Tooltip
Mentions
Blog Mentions: 1

Save time finding and organizing research with Mendeley

Sign up for free
0