The reaction between atomic silicon and the mercapto radical has been computationally investigated by means of electronic structure and kinetics calculations to establish its possible role in the formation of interstellar SiS. According to our kinetics estimates based on the electronic structure calculations of the Si+SH potential energy surface, the reaction is very fast reaching the gas-kinetics limit. Therefore, the title reaction is an efficient formation route of interstellar SiS provided that silicon atoms and mercapto radicals are present. Implications for the observation of an anomalously high abundance of SiS in the shocked region around a Sun-like protostar (L1157-B1) are also presented.
CITATION STYLE
Rosi, M., Skouteris, D., Balucani, N., Mancini, L., Lago, N. F., Podio, L., … Ceccarelli, C. (2019). Electronic Structure and Kinetics Calculations for the Si+SH Reaction, a Possible Route of SiS Formation in Star-Forming Regions. In Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics) (Vol. 11621 LNCS, pp. 306–315). Springer Verlag. https://doi.org/10.1007/978-3-030-24302-9_22
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