Nanowire field effect transistors in optoelectronics

Abstract

The nanowire FETs are discussed in this chapter as key components for optoelectronic circuits. The features of photonic devices are elaborated such as light absorption, generation of e-h pairs and the carrier transport, and the parameters dictating sensitivities, e.g., the wavelengths of light and the materials used are examined. Moreover, the 1-D nanostructures as a platform for photodetectors are highlighted, in conjunction with carbon nanotubes, nanobelts, nanoribbons, nanorods and nanowires. Also, the issues are addressed to regarding the process complexities, light absorption and adsorption, nanowire cross-section, quantum efficiency, threshold voltage shifts, the surface to volume ratio, carrier collection, etc. Moreover, the materials used for 1-D photodetector are examined, including compound semiconductors, Sulfides, Selenides, Tellurides, Metal Oxides, Zinc Oxide, Tin Oxide, Copper Oxide, Gallium Oxides and Indium Oxides, etc. These materials are characterized in terms of Schottky and Ohmic contacts, photoluminescence, photoconductivity, efficiency and speed of detection, etc.