Ultraviolet photosulfidation of III-V compound semiconductors: A new approach to surface passivation

Abstract

A new passivation technique for III-V compound semiconductors based on ultraviolet photolysis of elemental sulfur vapor has been developed. Photosulfidation produces a greater increase in the photoluminescence intensity from GaAs samples than that produced by conventional (NH4) 2S dip treatments and is more photostable than the conventional wet process. X-ray photoelectron spectroscopy of the photosulfided GaAs surfaces indicate formation of a surface sulfide rather than the disulfide characteristic of the (NH4)2S process.