High shunt resistance in polymer solar cells comprising a MoO3 hole extraction layer processed from nanoparticle suspension

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Abstract

In this report, we present solution processed molybdenum trioxide (MoO 3) layers incorporated as hole extraction layer (HEL) in polymer solar cells (PSCs) and demonstrate the replacement of the commonly employed poly(3,4-ethylene dioxythiophene):(polystyrene sulfonic acid) (PEDOT:PSS). MoO3 is known to have excellent electronic properties and to yield more stable devices compared to PEDOT:PSS. We demonstrate fully functional solar cells with up to 65 nm thick MoO3 HEL deposited from a nanoparticle suspension at low temperatures. The PSCs with an active layer comprising a blend of poly(3-hexylthiophene) and [6,6]-phenyl- C61 butyric acid methyl ester and a MoO3 HEL show comparable performance to reference devices with a PEDOT:PSS HEL. The best cells with MoO3 reach a fill factor of 66.7% and power conversion efficiency of 2.92%. Moreover, MoO3 containing solar cells exhibit an excellent shunt behavior with a parallel resistance of above 100 kcm2. © 2011 American Institute of Physics.

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APA

Stubhan, T., Ameri, T., Salinas, M., Krantz, J., MacHui, F., Halik, M., & Brabec, C. J. (2011). High shunt resistance in polymer solar cells comprising a MoO3 hole extraction layer processed from nanoparticle suspension. Applied Physics Letters, 98(25). https://doi.org/10.1063/1.3601921

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