Antiphase Boundaries in GaAs/Ge and GaP/Si

Abstract

We identified antiphase domains (APD) and antiphase boundaries (APB) in MOVPE grown low lattice mismatched GaAs on Ge and GaP on Si with the help of an improved dark field transmission electron microscopy technique, which exploits image pairs of (002)/(00-2) and (111)/(11-1) reflections. Both type {110} and {111} APBs were observed and their occurrence is shown to depend oil growth conditions of the III/V semiconductor as well as oil the pre-treatment of the silicon or germanium substrate.