Multiscale numerical models for simulation of radiation events in semiconductor devices

Abstract

This paper describes the new CFDRC mixed-mode simulator which combines multiscale 3D Technology Computer Aided Design (TCAD) device models (fluid carrier transport and nuclear ion track impact), and advanced compact transistors models. Key features include an interface and 3D adaptive meshing to allow simulations of single event radiation effects with nuclear reactions and secondary particles computed by Vanderbilt's MRED/Geant4 tools. © 2008 Springer-Verlag Berlin Heidelberg.