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Book Chapter

Step Heights of Switching Effects of Single Interface Traps in Mosfets

  • Jäntsch O
  • Kircher R
Springer US, (1988), 349-356
DOI: 10.1007/978-1-4899-0774-5_38
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Jäntsch, O., & Kircher, R. (1988). Step Heights of Switching Effects of Single Interface Traps in Mosfets. In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface (pp. 349–356). Springer US. https://doi.org/10.1007/978-1-4899-0774-5_38

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