Photon detectors

Abstract

Current interest in hydrogenated amorphous silicon (a-Si:H) technology extends well beyond active-matrix liquid-crystal displays and solar cells; it stems from the variety of desired material and technological attributes.[1-3] The high optical absorption; low-temperature deposition (<300°C); high uniformity over large areas; few constraints on substrate size, material, or topology; standard integrated circuit lithography processes; and low capital equipment cost associated with the a-Si:H material offer a viable technological alternative for improved imaging of optical signals and high-energy radiation. Notable application areas include contact imaging for document scanning, digital copiers, and fax machines; color sensors/imaging; position/motion detection; and radiation detection/imaging of high-energy X-rays in biomedical applications, gamma-ray space telescopes, airport security systems, and nondestructive testing of the mechanical integrity of materials or structures. © 2006 Springer-Verlag Berlin Heidelberg.