The resistive switching characteristics of the Cu/SiOx/Pt structure (control sample) exhibited a direct correlation to humidity. The H2O vapor formed the Cu oxide at the Cu/SiOx interface, and Cu ions were injected from the Cu oxide into the SiOx layer, thus improving the resistive switching. However, the control sample demonstrated substantial switching dispersion in a vaporless environment. The CuxO layer in the Cu/CuxO/SiOx/Pt structure (CuxO sample) helped the dissolution of Cu ions from the Cu electrode into the SiOx layer, enabling effective electrochemical resistive switching in a vaporless environment. The CuxO sample exhibited low switching dispersion and favorable endurance characteristics in a vaporless environment.
CITATION STYLE
Liu, C. Y., & Huang, Z. Y. (2015). Effects of a CuxO Buffer Layer on a SiOx-Based Memory Device in a Vaporless Environment. Nanoscale Research Letters, 10(1). https://doi.org/10.1186/s11671-015-1003-3
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