PROPERTIES OF SEMITRANSPARENT FILMS OF LOW WORK FUNCTION METALS FOR MIS SOLAR CELLS.

Abstract

The MIS junction with the continuous layer approach does not yield efficiencies that are as high as those of the grating approach. In an attempt to improve the efficiency of this type of MIS cell, alternative barrier metals of low work function (Be, Hf, Sc, Y) are investigated. In addition to the high induced barriers and high open circuit voltages, e. g. , 565 mV at AM1 of cells with Sc and p-type Si of 6 OMEGA cm, it is shown that the results of the investigations of the important optical and electrical properties of thin films on quartz substrates appear promising for potential high short circuit current densities for cells formed with these alternative metals. The spectral and the thickness dependence of the transmittances as well as the thickness dependence of the sheet resistances were measured. Data for the reflectance and an approximate internal transmittance are given. The reactivity of the metal films increases from Al, Hf, Sc to Y.