Abstract
Motivated by the requirements for modeling EUV light sources for semiconductor lithography, a systematic study of electron-impact ionization cross sections of Snq+ ions (q 1, ⋯, 13) in the energy range up to 1000 eV was performed. Detailed analysis of all in all 25 measured cross-section functions revealed strong contributions of indirect ionization mechanisms which need to be taken into account in EUV-source plasma modeling.
Cite
CITATION STYLE
Borovik, A., Hillenbrand, P. M., Rudolph, J., Gharaibeh, M. F., Rausch, J., Huber, K., … Müller, A. (2012). Electron-impact single and double ionization of tin ions. In Journal of Physics: Conference Series (Vol. 388). Institute of Physics. https://doi.org/10.1088/1742-6596/388/6/062023
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
