(SN)x-GaAs polymer-semiconductor solar cells

Abstract

We report the first solar cell whose junction is formed by a polymer-semiconductor interface. Open-circuit voltages, Voc≳0.7 V, have been observed on cells consisting of a thin film of polymeric sulfur-nitride, (SN)x, deposited on GaAs. This is an enhancement of more than 40% over the Voc commonly measured with metal-GaAs solar cells. Initial efforts have resulted in efficiencies ≳6% without antireflection coatings.