Preparation of Selenide Semiconductor Materials and Photoelectric Detection in Thin Film Solar Cells

Abstract

For nearly half a century, semiconductor technology has achieved rapid development as the core of modern high technology. New materials and various functional devices based on semiconductor technology affect all aspects of national production and life. The development and application of semiconductor materials is the basis for the development of semiconductor technology, which is also an important source of motivation and confidence for countless researchers. In this paper, two kinds of selenide semiconductors with excellent material properties are selected for key research, including the controllable preparation of materials and the exploration of high-performance optoelectronic functional devices. Firstly, Sb2Se3 nanorods were prepared by thermal injection method, and the key defects of low conductivity of Sb2Se3 nanorods were successfully solved by forming semiconductor heterojunction and semiconductor doping. Based on this, a Sb2Se3 nanorod-based photovoltaic with excellent performance was constructed. Prototype device. Subsequently, the conductivity and photoconductivity of Sn-doped Sb2Se3 polycrystalline semiconductor were controlled by higherature melting method. Based on the preparation of Sb2Se3-based target, Sb2Se3-based thin film was prepared by RF magnetron sputtering. Quasi-homojunction Sb2Se3 thin film solar cell with important development potential. In addition, the thermal injection method is used to realize the controllable preparation of pure phase nanoflowers, and combined with mature Si-based semiconductor technology, the high-performance y-Iri2Se3/Si heterojunction photodiode is constructed for the first time.