EBIC Characterization of Light Emitting Structures Containing InGaN/GaN MQW

Abstract

Blue light emitting structures based on the InGaN/GaN multiple quantum wells have been studied in the electron beam induced current (EBIC) mode. It is shown that quantum wells noticeably decrease the excess carrier collection efficiency by enhancing the recombination inside the depletion region. That allows one to monitor the active layer transparency for minority carriers and its lateral homogeneity by the EBIC investigations. Two types of extended defects with the bright EBIC contrast locally increasing the barrier transparency are revealed.