The different classes of electrochemical etching of silicon are briefly compared and contrasted, and then the literature on galvanic etching is comprehensively reviewed. Thick uniform mesoporous films with surface areas as high as 910 m2/g have been achieved with optimized galvanic etching (Fig. 1).
CITATION STYLE
Kolasinski, K. W. (2014). Porous silicon formation by galvanic etching. In Handbook of Porous Silicon (pp. 23–33). Springer International Publishing. https://doi.org/10.1007/978-3-319-05744-6_3
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