Reversing the temperature dependence of the sensitized Er3+ luminescence intensity

Abstract

The temperature-induced quenching of the Er3+ luminescence is a significant problem in silicon-based materials systems ultimately designed for room-temperature applications. Here, we show that amorphous silicon-rich oxide, moderately annealed in order to avoid growth of Si nanocrystals, exhibits a reversed temperature dependence in which the integrated Er3+ luminescence increases in intensity upon heating from 77 up to 300 K. This behavior is attributed to a unique spectrum of interacting defects that efficiently sensitize the Er3+ levels, even in the absence of nanocrystals. The effect could have ramifications in fiber-optic emitters or amplifiers to be operated at noncryogenic temperatures. © 2009 American Institute of Physics.