Abstract
In the device modeling and characterization Chapter 5, DC, small-signal, and noise characterization and modeling are presented with respect to nitride-specific questions. As frequency dispersion is a major source of performance and device degradation, the characterization and reduction of dispersion involving pulsed-characterization and other advanced techniques are discussed. Large-signal characterization and modeling are discussed for nitride devices, including the modeling of contacts, diodes, dispersion, and thermal aspects.
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Device characterization and modeling. (2008). In Springer Series in Materials Science (Vol. 96, pp. 197–270). Springer Verlag. https://doi.org/10.1007/978-3-540-71892-5_5
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