Effects of fin width on high-κ/metal gate bulk FinFET devices

Abstract

The effects of silicon fin width on the electrostatic characteristics of high-κ/metal gate bulk fin field-effect transistor (FinFET) devices are investigated. Six devices with different layout fin widths and lengths are designed and fabricated. A technology computer-aided design (TCAD) simulation model with the proposed devices simplified as an equivalent circuit with three components (Cox, Cs and Rs) indicates that for a given layout area, a narrower fin width leads to a worse flat band voltage shift and larger variation of gate capacitance due to increased substrate resistance. © The Institution of Engineering and Technology 2014.