Abstract
Photoluminescence (PL) spectra properties of 0.5 and 2.0 mol% Al doped Bi4Ge3O12 crystals in near-infrared (NIR) region were studied. A relative broad emission band can be found at 1189nm in these Al doped Bi4Ge3O12 under 808nm laser diodes (LDs) excitation. The doped Bi4Ge3O12 also exhibit emission band centered at about 1324nm under 980nm LDs excitation. The Al ions can play a helpful role in NIR emission of doped Bi 4Ge3O12 crystals. © 2012 The Ceramic Society of Japan.
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Yu, P., Su, L., Guo, X., & Xu, J. (2012). Near-infrared luminescence in Al doped Bi4Ge3O 12 crystals. Journal of the Ceramic Society of Japan, 120(1403), 265–267. https://doi.org/10.2109/jcersj2.120.265
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