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Removing Relativistic Effects in EELS for the Determination of Optical Properties

  • Stöger-Pollach M
  • Laister A
  • Schattschneider P
  • et al.
Springer Netherlands, (2008), 345-348
DOI: 10.1007/978-1-4020-8615-1_76
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Abstract

Obtaining correct optical properties from low loss electron energy loss spectrometry data is impossible as long as retardation effects are not taken into account. In the present work we discuss three methods of removal of Čerenkov and wave guide losses in order to improve the accuracy of the Kramers-Kronig Analysis of semiconducting materials.

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APA

Stöger-Pollach, M., Laister, A., Schattschneider, P., Potapov, P., & Engelmann, H. J. (2008). Removing Relativistic Effects in EELS for the Determination of Optical Properties. In Microscopy of Semiconducting Materials 2007 (pp. 345–348). Springer Netherlands. https://doi.org/10.1007/978-1-4020-8615-1_76

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