Next generation ferroelectric materials for semiconductor process integration and their applications

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Abstract

Ferroelectrics are a class of materials that possess a variety of interactions between electrical, mechanical, and thermal properties that have enabled a wealth of functionalities. To realize integrated systems, the integration of these functionalities into semiconductor processes is necessary. To this end, the complexity of well-known ferroelectric materials, e.g., the perovskite class, causes severe issues that limit its applications in integrated systems. The discovery of ferroelectricity in hafnium oxide-based materials brought a renewed interest into this field during the last decade. Very recently, ferroelectricity was also verified in aluminum scandium nitride extending the potential of seeing a wealth of ferroelectric functions in integrated electronics in the future. This paper discusses the prospects of both material systems in various applications.

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Mikolajick, T., Slesazeck, S., Mulaosmanovic, H., Park, M. H., Fichtner, S., Lomenzo, P. D., … Schroeder, U. (2021). Next generation ferroelectric materials for semiconductor process integration and their applications. Journal of Applied Physics, 129(10). https://doi.org/10.1063/5.0037617

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