GaN layers grown by HVPE on P-type 6H-SiC substrates

Abstract

Gallium nitride films were successfully grown by HVPE technique on p-type 6H-SiC substrate. The layers exhibit high crystal quality as was determined by X-ray diffraction. Photoluminescence (PL) of these films was measured. The PL spectra were dominated by band edge emission. Concentration Nd-N a in undoped epitaxial layers ranged from 2×1017 to 1×1019 cm-3. Mesa-structures formed by reactive ion etching showed good rectifying current-voltage characteristics for GaN/SiC pn heterojunctions.