Abstract
We report on the observation of inertial-ballistic transport in nanoscale cross junctions fabricated from epitaxial graphene grown on SiC(0001). Ballistic transport is indicated by a negative bend resistance of R12,43 ≈-170 ω, which is measured in a nonlocal, four-terminal configuration at 4.2 and which vanishes as the temperature is increased above 80 K. © 2009 American Institute of Physics.
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CITATION STYLE
APA
Weingart, S., Bock, C., Kunze, U., Speck, F., Seyller, T., & Ley, L. (2009). Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions. Applied Physics Letters, 95(26). https://doi.org/10.1063/1.3276560
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