Thermally stable schottky barrier diode by Ru/diamond

Abstract

For the high temperature operation of diamond for high power devices, a new Ru/diamond material contact was proposed for the first time for thermally stable Schottky barrier diode (SBD). This contact showed very good Schottky properties, with the further advantages of low resistivity, high chemical stability and very high adhesion characteristics. The devices were tested for thermal stability at 400°C for 1500h and 500°C for 250 h. The SBD characteristics were highly stable, and after an initial stabilization time of 250 h, further changes in the parameters were less than 2.5% from 250 to 1500h at 400°C. For 500°C testing, there was no change from 100 to 250 h. This thermally stable Schottky contact is promising for future high temperature operation device, such as those applied in the cooling systems-free power modules. © 2009 The Japan Society of Applied Physics.