Effects of the F4TCNQ-doped pentacene interlayers on performance improvement of top-contact pentacene-based organic thin-film transistors

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Abstract

In this paper, the top-contact (TC) pentacene-based organic thin-film transistor (OTFT) with a tetrafluorotetracyanoquinodimethane (F4TCNQ)-doped pentacene interlayer between the source/drain electrodes and the pentacene channel layer were fabricated using the co-evaporation method. Compared with a pentacene-based OTFT without an interlayer, OTFTs with an F4TCNQ: Pentacene ratio of 1:1 showed considerably improved electrical characteristics. In addition, the dependence of the OTFT performance on the thickness of the F4TCNQ-doped pentacene interlayer is weaker than that on a Teflon interlayer. Therefore, a molecular doping-type F4TCNQ-doped pentacene interlayer is a suitable carrier injection layer that can improve the TC-OTFT performance and facilitate obtaining a stable process window.

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Fan, C. L., Lin, W. C., Chang, H. S., Lin, Y. Z., & Huang, B. R. (2016). Effects of the F4TCNQ-doped pentacene interlayers on performance improvement of top-contact pentacene-based organic thin-film transistors. Materials. MDPI AG. https://doi.org/10.3390/ma9010046

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