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Impact Ionization and Avalanche Multiplication in AlGaAs: a Time-Resolved Study

  • Betz M
  • Trumm S
  • Eckardt M
  • et al.
Springer Berlin Heidelberg, (2007), 277-280
DOI: 10.1007/978-3-540-36588-4_63
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Abstract

Tracing ultrafast modifications of the Franz-Keldysh absorption spectrum of biased AlxGa1-xAs heterostructure diodes, we directly analyze the dynamical build up of a nonequilibrium carrier avalanche due to impact ionization for electric fields F > 350 kV/cm. The timescale of the carrier multiplication is found to be in the order of 10 ps depending on the applied bias. Monte Carlo simulations in a simplified band structure agree well with the experiment.

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APA

Betz, M., Trumm, S., Eckardt, M., Schwanhäußer, A., Sotier, F., Leitenstorfer, A., … Döhler, G. H. (2007). Impact Ionization and Avalanche Multiplication in AlGaAs: a Time-Resolved Study. In Nonequilibrium Carrier Dynamics in Semiconductors (pp. 277–280). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-540-36588-4_63

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