In this paper, we presents a MEMS pressure sensor integrated with a readout circuit on a chip for an on-chip signal processing. The capacitive pressure sensor is formed on a CMOS chip by using a post-CMOS MEMS processes. The proposed device consists of a sensing capacitor that is square in shape, a reference capacitor and a readout circuitry based on a switched-capacitor scheme to detect capacitance change at various environmental pressures. The readout circuit was implemented by using a commercial 0.35 μm CMOS process with 2 polysilicon and 4 metal layers. Then, the pressure sensor was formed by wet etching of metal 2 layer through via hole structures. Experimental results show that the MEMS pressure sensor has a sensitivity of 11 mV/100 kPa at the pressure range of 100–400 kPa.
CITATION STYLE
Jang, M., & Yun, K. S. (2017). MEMS capacitive pressure sensor monolithically integrated with CMOS readout circuit by using post CMOS processes. Micro and Nano Systems Letters, 5(1). https://doi.org/10.1186/s40486-016-0037-3
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