Abstract
ZnSe layers grown by molecular beam epitaxy (MBE), after processing by epitaxial lift-off, have been analyzed using fracture mechanics and thin-film interference to determine their adhesion properties on two different substrates, viz. ZnSe and glass, yielding adhesion energy of 270 ± 60 mJ m−2 and 34 ± 4 mJ m−2, respectively. These values are considerably larger than if only van der Waals forces were present and imply that adhesion arises from chemical bonding.
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Mavridi, N., Zhu, J., Eldose, N. M., Prior, K. A., & Moug, R. T. (2018). Adhesion Measurements of Epitaxially Lifted MBE-Grown ZnSe. Journal of Electronic Materials, 47(8), 4394–4398. https://doi.org/10.1007/s11664-018-6372-9
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