Ab initio band structure calculations were performed for GaAs, GaN, and ZnS within density functional theory to determine the impact ionization rate and the high-field electron transport characteristics. The drift velocity, mean kinetic energy, valley populations, and the ionization coefficient are gained from full-band ensemble Monte Carlo simulations. A pronounced influence of the band structure is found for all materials. Results are shown here for GaN.
CITATION STYLE
Kuligk, A., Fitzer, N., & Redmer, R. (2007). Impact Ionization and High-Field Electron Transport in GaN. In Nonequilibrium Carrier Dynamics in Semiconductors (pp. 139–142). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-540-36588-4_30
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