A 60-GHz millimeter-wave CMOS SIR pseudo-interdigital band-pass filter

Abstract

The chip using TSMC 0.18 μm CMOS process, a 60-GHz on-chip band-pass filter (BPF) is implemented using microstrip structures like pseudo-interdigital cavity to form band-pass filters, impedance matching to enhance this through a different filter device’s performance. The proposed on-chip BPF employs the folded resonator cell structure on patterned ground shields. By comparison between the electromagnetic (EM) simulations and measurement results, the proposed BPF has the center frequency of 60 GHz, insertion loss of 2.5 dB, 57–64 GHz band-pass of the return loss is about 20 dB. The measured results show good pass-band performance with transmission zeros thereby verifying the design principle. The design of the 60 GHz filter integrated in the chip, the ultimate design goal for the integration of 60 GHz millimeter-wave RF front-end chip. 60 GHz band filter is proposed to identify the impedance matching with microstrip structures. Simulation results on various test problems confirm that 60 GHz band filter significantly for mobile communications, networking, and applications.