Abstract
The optoelectronic gate light-emitting field-effect transistor (OEG LEFET) containing alternate SiO2 and SiNx dielectric stacks allows enhanced light emission for a designed spectrum range and provides reliable strength for a wide operating voltage. The device can improve the emission efficiency by 4.5 times in comparison to a reference LEFET with a SiNx gate dielectric and can reach a brightness as high as 4500 cd/m2. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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CITATION STYLE
Namdas, E. B., Hsu, B. B. Y., Yuen, J. D., Samuel, I. D. W., & Heeger, A. J. (2011). Optoelectronic gate dielectrics for high brightness and high-efficiency light-emitting transistors. Advanced Materials, 23(20), 2353–2356. https://doi.org/10.1002/adma.201004102
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