Near-surface regrowth rate effects in high-dose ion-implanted (100) silicon

Abstract

High-resolution Rutherford backscattering and channeling has been employed to investigate regrowth kinetics of amorphous layers in high-dose As- and Pb-implanted (100) silicon. Our results indicate that epitaxial regrowth rates are severely retarded by high concentrations of Pb and As in the silicon lattice and that polycrystalline growth may predominate under such conditions.