Plasmon-gating photoluminescence in graphene/GeSi quantum dots hybrid structures

4Citations
Citations of this article
10Readers
Mendeley users who have this article in their library.

This article is free to access.

Abstract

The ability to control light-matter interaction is central to several potential applications in lasing, sensing, and communication. Graphene plasmons provide a way of strongly enhancing the interaction and realizing ultrathin optoelectronic devices. Here, we find that photoluminescence (PL) intensities of the graphene/GeSi quantum dots hybrid structures are saturated and quenched under positive and negative voltages at the excitation of 325 nm, respectively. A mechanism called plasmon-gating effect is proposed to reveal the PL dependence of the hybrid structures on the external electric field. On the contrary, the PL intensities at the excitation of 405 and 795 nm of the hybrid structures are quenched due to the charge transfer by tuning the Fermi level of graphene or the blocking of the excitons recombination by excitons separation effect. The results also provide an evidence for the charge transfer mechanism. The plasmon gating effect on the PL provides a new way to control the optical properties of graphene/QD hybrid structures.

Cite

CITATION STYLE

APA

Chen, Y., Wu, Q., Ma, Y., Liu, T., Fan, Y., Yang, X., … Jiang, Z. (2015). Plasmon-gating photoluminescence in graphene/GeSi quantum dots hybrid structures. Scientific Reports, 5. https://doi.org/10.1038/srep17688

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free