Mobility in multigate MOSFETs

Abstract

This Chapter analyzes the behavior of electron mobility in different multigate structures comprising double-gate transistors, FinFETs, and silicon nanowires. Mobility in multiple gate devices is compared to that in single-gate devices and different approaches for improving the mobility in these devices, such as different crystallographic orientations and strained Si channels, are studied. © 2008 Springer Science+Business Media, LLC.