Hysterisial variable-threshold MOS gates

Abstract

Asynchronous circuits are a technique in order to solve the some serious synchronous circuits' problems such as clock skew, power consumption and electromagnetic noise. In this paper, we designed histerisial variable-threshold gates based on neuron MOS transistors for asynchronous circuits. The proposed hysteresial variable-threshold gates are also expected usuful for neural networks or machine larning for the hysteresis, that is memory, characteristics. The developed gates having variable-threshold operations can be used to set a threshold of a neuron. The simulation results of hysteresial variable-threshold gates are provided with SPICE simulator. The synthesized hysterisial variable-threshold gates has three gate-inputs and two control wires. Then asynchronous half-adder is demonstrated as an arithmetic circuit example.