Polymer dielectrics and orthogonal solvent effects for high-performance inkjet-printed top-gated P-channel polymer field-effect transistors

Abstract

We investigated the effects of a gate dielectric and its solvent on the characteristics of top-gated organic fieldeffect transistors (OFETs). Despite the rough top surface of the inkjet-printed active features, the charge transport in an OFET is still favorable, with no significant degradation in performance. Moreover, the characteristics of the OFETs showed a strong dependency on the gate dielectrics used and its orthogonal solvents. Poly(3-hexylthiophene) OFETs with a poly(methyl methacrylate) dielectric showed typical p-type OFET characteristics. The selection of gate dielectric and solvent is very important to achieve high-performance organic electronic circuits. © 2011 ETRI.