Abstract
A simulation study of the gain effect of solid-state impact ionization multipliers (SIMs) is reported. The SIM device separates the absorption and multiplication regions and is an alternative to avalanche photodiodes (APDs) used in LiDARs. The effects of geometric structures on electric field and potential distributions are simulated and studied. The optimized geometric structure increases the gain to around 270 at the voltage of 60 V. Based on this simulation, an optimized structure is proposed for future device fabrication.
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Geng, Y., Li, Q., & Qiu, W. (2020). Simulation of gain effect of solid-state impact ionization multipliers. In Advances in Intelligent Systems and Computing (Vol. 1031 AISC, pp. 379–383). Springer. https://doi.org/10.1007/978-981-13-9406-5_46
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