Chemical vapor deposition growth of large-areas two dimensional materials: Approaches and mechanisms

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Abstract

Two-dimensional (2D) layered materials have attracted increasing attention in recent years because of their abundant material categories and superior physical/chemical properties. In order to satisfy the requirements for highly integrated devices in the post-Moore era, substantial efforts have been devoted to producing atomically thin 2D materials with large lateral dimensions and high crystalline quality. The controllable synthesis is the precondition of the implementation of large mass producing 2D material in industry. Chemical vapor deposition (CVD) is a powerful method widely used in the synthesis of 2D materials and their hybrid structures. However, it is still challengeable to flexibly and easily grow any 2D materials into large area. Therefore, a systematic understanding of the requirements for controllable growth of different 2D materials are desired. In this review article, we provide a comprehensive discussion on the influencing factors, material transport, nucleation and growth rate in the CVD growth process. Finally, the strategies to further improve the size and quality of 2D materials are prospected.

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Wang, S., Wang, W. H., Lü, J. P., & Ni, Z. H. (2021, January 20). Chemical vapor deposition growth of large-areas two dimensional materials: Approaches and mechanisms. Wuli Xuebao/Acta Physica Sinica. Institute of Physics, Chinese Academy of Sciences. https://doi.org/10.7498/aps.70.20201398

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