Reprocessing of thermally oxidized aluminum arsenide (AlAs) in epitaxial multilayers without delamination

6Citations
Citations of this article
10Readers
Mendeley users who have this article in their library.
Get full text

Abstract

Annealing or processing of AlAs that has been subjected to a wet thermal oxidation process can result in severe delamination of material at the oxidation front. This paper reports a procedure for preventing this delamination and presents a possible cause for the delamination.

Author supplied keywords

Cite

CITATION STYLE

APA

Hobbs, L., Eddie, I., Erwin, G., Bryce, A. C., De La Rue, R. M., Roberts, J. S., … Mackenzie, M. (2005). Reprocessing of thermally oxidized aluminum arsenide (AlAs) in epitaxial multilayers without delamination. Journal of Electronic Materials, 34(3), 232–239. https://doi.org/10.1007/s11664-005-0209-z

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free