Abstract
Numerical study in conjunction with comprehensive bending experiments has demonstrated that (100)-Si has the optimum channel direction along <110> in terms of the device performance of strained 65nm-node nMOSFETs with Contact Etch Stop Layer (CESL), and that both the shear strain component and the quantum confinement effect play an important role in this superiority.
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CITATION STYLE
Takashino, H., Okagaki, T., Uchida, T., Hayashi, T., Tanizawa, M., Tsukuda, E., … Inoue, Y. (2007). Impact of shear strain and quantum confinement on <110> channel nMOSFET with high-stress cesl. In 2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 (pp. 105–108). Springer-Verlag Wien. https://doi.org/10.1007/978-3-211-72861-1_25
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