Inverted spin polarization of Heusler alloys for spintronic devices

Abstract

A magnetic logic concept overcomes the major limitations of field programmable gate arrays while having a 50% smaller unit cell than conventional designs utilizing magnetic tunnel junctions with one Heusler alloy electrode. These show positive and negative tunneling magnetoresistance values at different bias voltages at room temperature which generally add an additional degree of freedom to all spintronic devices. © 2006 American Institute of Physics.