Vertical-organic-nanocrystal-arrays for crossbar memristors with tuning switching dynamics toward neuromorphic computing

Abstract

Memristors proposed by Leon Chua provide a new type of memory device for novel neuromorphic computing applications. However, the approaching of distinct multi-intermediate states for tunable switching dynamics, the controlling of conducting filaments (CFs) toward high device repeatability and reproducibility, and the ability for large-scale preparation devices, remain full of challenges. Here, we show that vertical-organic-nanocrystal-arrays (VONAs) could make a way toward the challenges. The perfect one-dimensional structure of the VONAs could confine the CFs accurately with fine-tune resistance states in a broad range of 103 ratios. The availability of large-area VONAs makes the fabrication of large-area crossbar memristor arrays facilely, and the analog switching characteristic of the memristors is to effectively imitate different kinds of synaptic plasticity, indicating their great potential in future applications.